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| 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. Integrated ESD protection makes the device robust. CASE OUTLINE 55QZ (Common Source) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS, VDS=0) Temperatures Storage Temperature Operating Case Temperature1 +65V +20V -65 to +150C +100C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL BVDSS IDSSF IGSSF VGS(TH) VDS(ON) gFS JC 1 CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Thermal Resistance TEST CONDITIONS VGS = 0V, ID = 2mA VDS = 32V, VGS = 0V VGS = 10V, VDS = 0V VDS = 10V, ID = 3mA VGS = 10V, ID = 1A VDS = 10V, ID = 1A MIN 65 TYP MAX 5 2 4 0.25 UNITS V A A V V S C/W 2 2.2 0.1 FUNCTIONAL CHARACTERISTICS @ 25C, Vds = 32V, IDQ = 250mA GPS Pd P1dB D NOTES: Common Source Power Gain Pulse Droop Output Power at 1dB Gain Compression Drain Efficiency Load Mismatch Pulse width = 32s, LTDC=2% F=1030/1090 MHz, Pout = 110W Pulse width = 32s, LTDC=2%, F=1030/1090 MHz F = 1030 MHz, Pout = 110W F = 1090 MHz, Pout = 110W 14 15 0.5 110 dB dB W % 45 50 5:1 1. At rated output power and pulse conditions 2. Pulse Format 1: 32s, 2% Long Term Duty Factor 3. Pulsed Bias: IDQ-PULSED = 6.5mA (@ 42us ON, 1.6msec) Rev. 0 - Apr. 2007 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110A Typical Performance (1030MHz ~ 1090MHz) 1011LD110A Input/Output 140.0 120.0 18.00 20.00 19.00 1011LD110A Ga in Ouput Power (W) 100.0 80.0 60.0 40.0 20.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gain (dB) 17.00 16.00 15.00 14.00 13.00 12.00 1030MHz 1060MHz 1090MHz 4.0 4.5 11.00 10.00 0.0 20.0 40.0 60.0 80.0 100.0 1030MHz 1060MHz 1090MHz 120.0 140.0 Input Pow e r (W ) Output Pow er (W ) 1011LD110A Input Re turn Loss 0.00 70.0% 1011LD110A Efficiency Input Return Loss (dB) -2.00 -4.00 -6.00 -8.00 -10.00 -12.00 -14.00 1030MHz 1060MHz 1090MHz Effi. (%) 60.0% 50.0% 40.0% 30.0% 20.0% -16.00 -18.00 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 10.0% 0.0 20.0 40.0 60.0 80.0 100.0 1030MHz 1060MHz 1090MHz 120.0 140.0 Output Pow e r (W ) Output Pow e r (W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110A 1011LD110A Test Circuit Layout Part C01, C04, C05, C06 C07, C08 C02, C03 C17 C09, C13 R01, R04 R05 M01 M03 M05 M07 M09 M11 M13 M15 1011LD110A Test Circuit Component Designations and Values Description Part Description 43pF Chip Capacitor (ATC 100A) C10, C14, 0.033uF Chip Capacitor C15 100pF Chip Capacitor (ATC 100A) C11 1uF 16V Tantalum Capacitor 5.6pF Chip Capacitor (ATC 100A) C12 47uF 63V Electrolytic Capacitor 1000uF, 63V Electrolytic Capacitor C16 470uF, 63V Electrolytic Capacitor 1000pF Chip Capacitor L01 6 Turns, 24 AWG, IDIA 0.092 15 , 1/4W Chip Resistor R02, R03 200 , 1/4W Chip Resistor 82.5 , 1/4W Chip Resistor X01 ADG419, Analog Device 36 x 300 mils (W x L) M02 36 x 966 mils (W x L) 300 x 175 mils (W x L) M04 136 x 70 mils (W x L) 422 x 86 mils (W x L) M06 602 x 351 mils (W x L) 420 x 8 mils (W x L) M08 420 x 10 mils (W x L) 881 x 420 mils (W x L) M10 641 x 292 mils (W x L) 771 x 190 mils (W x L) M12 75 x 479 mils (W x L) 464 x 164 mils (W x L) M14 75 x 271 mils (W x L) 36 x 130 mils (W x L) PCB Rogers RT6006, r=6.15, 25mils, 1oz Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110A Typical Impedance Values Input Matching Network DUT Output Matching Network ZS ZL Frequency (MHz) 1030 1060 1090 ZS ( ) 0.73 - j2.71 0.70 - j2.49 0.67 - j2.28 ZL ( ) 3.11 - j1.66 2.87 - j1.79 2.56 - j1.82 * VDS = 32V, IDQ = 250mA, Pout = 110W * Pulse Format: 32s, 2% Long Term Duty Factor Timing Diagram for Pulsed Bias 1.6ms 42us DC RF 32us 5us 5us Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110A Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. |
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